GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

As shown, a uniformly doped Silicon (Si) bar of length L = 0.1 μm with a donor concentration N_D = 10¹⁶ cm^–3 is illuminated at x = 0 such that electron and hole pairs are generated at the rate of G_L = ${\mathit{G}}_{\mathit{L}0}\left(1-\frac{\mathit{x}}{\mathit{L}}\right),0\le \mathit{x}\le \mathit{L}$, where G_L0 = 10¹⁷ cm^–3 s^–1.
Hole lifetime is 10^–4 s, electronic charge q = 1.6 × 10^–19 C, hole diffusion coefficient D_p = 100 cm²/s and low level injection condition prevails.
Assuming a linearly decaying steady sate excess hole concentration that goes to 0 at x = L, the magnitude of the diffusion current density at x = L/2, in A/cm², is ________.