As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of N D1 = 10 14 cm –3 and N D2 = 10 16 cm –3 in the n-regions of the diodes, and uniform acceptor doping concentrations of N A1 = 10 14 cm –3 and N A2 = 10 16 cm –3 in the p-regions of the diodes, respectively. Assuming that the reverse bias voltage is ≫ built-in potentials of the diodes, the ratio C 2 /C 1 of their reverse bias capacitances for the same applied reverse bias, is ________.

GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

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As shown, two Silicon (Si) abrupt p-n junction diodes are fabricated with uniform donor doping concentrations of N_D1 = 10¹⁴ cm^–3 and N_D2 = 10¹⁶ cm^–3 in the n-regions of the diodes, and uniform acceptor doping concentrations of N_A1 = 10¹⁴ cm^–3 and N_A2 = 10¹⁶ cm^–3 in the p-regions of the diodes, respectively. Assuming that the reverse bias voltage is ≫ built-in potentials of the diodes, the ratio C₂/C₁ of their reverse bias capacitances for the same applied reverse bias, is ________.

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