The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 × 10 16 cm –3 and electronic charge q = 1.6 × 10 –19 C. If a bias of 5 V is applied across a 1 μm region of this semiconductor, the resulting current density in this region, in kA/cm 2 , is ________.

GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

Question : 46 of 65

Marks: +1, -0

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 × 10¹⁶ cm^–3 and electronic charge q = 1.6 × 10^–19 C. If a bias of 5 V is applied across a 1 μm region of this semiconductor, the resulting current density in this region, in kA/cm², is ________.

Your Answer:

Validate

Go to Question:

Prev Question

Next Question