GATE Electronics and Communications (EC) 2022 Solved Paper

In a non-degenerate bulk semiconductor with electron density n = 10¹⁶ cm^-3 , the value of E_C - E_Fn = 200 meV, where E_C and E_Fn denote the bottom of the conduction band energy and electron Fermi level energy, respectively. Assume thermal voltage as 26 meV and the intrinsic carrier concentration is 10¹⁰ cm^-3 . For n = 0.5 × 10¹⁶ cm^-3 , the closest approximation of the value of (E_C − E_Fn), among the given options, is __________.