GATE Electronics and Communications (EC) 2019 Solved Paper

Consider a long-channel MOSFET with a channel length $1\mathit{\mu }\mathit{m}$ and width $10\mathit{\mu }\mathit{m}$. The device parameters are acceptor concentration $\mathit{N}\mathit{A}=5\times {10}^{16}{\mathit{c}\mathit{m}}^{-3}$, electron mobility ${\mathit{\mu }}_{\mathit{n}}=800{\mathit{c}\mathit{m}}^2/\mathit{V}-\mathit{s},$ oxide capacitance/area ${\mathit{C}}_{0\mathit{x}}=3.45\times {10}^{-7}\mathit{F}/{\mathit{c}\mathit{m}}^2$ threshold voltage ${\mathit{V}}_{\mathit{T}}=0.7\mathit{V}$. The drain saturation current $\left({\mathrm{I}}_{\mathrm{Dsat}}\right)$ for a gate voltage of $5\mathit{V}$ is _____________ mA (rounded off to two decimal places).