GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

Question : 20 of 65

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An n⁺- n Silicon device is fabricated with uniform and non-degenerate donor doping concentrations of N_D1 = 1 × 10¹⁸ cm^-3 and N_D2 = 1 × 10¹⁵ cm^-3 corresponding to the n⁺ and n regions respectively. At the operational temperature T, assume complete impurity ionization, kT/q = 25 mV, and intrinsic carrier concentration to be n_i = 1 × 10¹⁰ cm^-3. What is the magnitude of the built – in potential of this device?

0.748 V
0.460 V
0.288 V
0.173 V

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