GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

Question : 19 of 65

Marks: +1, -0

A bar of Gallium Arsenide (GaAs) is doped with Silicon such that the Silicon atoms occupy Gallium and Arsenic sites in the GaAs crystal. Which one of the following statements is true?

Silicon atoms act as p-type dopants in Arsenic sites and n-type dopants in Gallium sites
Silicon atoms act as n-type dopants in Arsenic sites and p-type dopants in Gallium sites
Silicon atoms act as p-type dopants in Arsenic as well as Gallium sites
Silicon atoms act as n-type dopants in Arsenic as well as Gallium sites

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