GATE Electronics and Communications (EC) 2015 Shift 1 Solved Paper

For a silicon diode with long P and N regions, the acceptor and donor impurity concentrations are $1\times {10}^{17}\mathit{c}{\mathit{m}}^3\mathit{a}\mathit{n}\mathit{d}1\times {10}^{15}\mathit{c}{\mathit{m}}^3$ respectively. The lifetimes of electrons in the P-region and holes in the N-region are both 100 μs. The electron and hole diffusion coefficients are $49\mathit{c}{\mathit{m}}^3$ and $36\mathit{c}{\mathit{m}}^2∕\mathit{s}$ respectively. Assume $\frac{\mathit{k}\mathit{T}}{\mathit{q}}=26\mathit{m}\mathit{V}$, the intrinsic carrier concentration is $1\times {10}^{10}\mathit{c}{\mathit{m}}^{-3}$ , and $\mathit{q}=1.6\times {10}^{-19}\mathit{C}.$ When a forward voltage of 208 mV is applied across the diode, the hole current density (in nA / cm²)  injected from P region to N region is