A silicon sample is uniformly doped with donor type impurities with a concentration of 10 16 /cm 3 . The electron and hole mobilities in the sample are 1200 cm 2 /V-s and 400 cm 2 /V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 × 10 -19 C. The resistivity of the sample (in Ω-cm) is _____

GATE Electronics and Communications (EC) 2015 Shift 1 Solved Paper

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A silicon sample is uniformly doped with donor type impurities with a concentration of 10¹⁶/cm³. The electron and hole mobilities in the sample are 1200 cm²/V-s and 400 cm²/V-s respectively. Assume complete ionization of impurities. The charge of an electron is 1.6 × 10^-19C. The resistivity of the sample (in Ω-cm) is _____

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