GATE Electronics and Communications (EC) 2015 Shift 1 Solved Paper

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Question : 19 of 65

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A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

Both the P-region and the N-region are heavily doped
The N-region is heavily doped compared to the P-region
The P-region is heavily doped compared to the N-region
An intrinsic silicon region is inserted between the P-region and the N-region

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