A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1\cm^{2} and thickness 0.5 mm. If the concentration of electrons in Ge is 2\times10^{19}\/\m^{2} and mobilities of electrons and holes are 0.36 \m^{2}\V^{-1}\s^{-1} and 0.14 \m^{2}\V^{-1}\s^{-1} respectively, then the current flowing through the plate will be

VITEEE 2010 Paper

Question : 38 of 120

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A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1cm2 and thickness 0.5 mm. If the concentration of electrons in Ge is 2×1019∕m2 and mobilities of electrons and holes are 0.36 m2V−1s−1 and 0.14 m2V−1s−1 respectively, then the current flowing through the plate will be

0.25 A
0.45 A
0.56 A
0.64 A

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