The concentration of electrons in an intrinsic semiconductor is 6 \times 10^{15} {\m}^{-3}. On doping with an impurity the electron concentration increases to 4 \times 10^{22} {\m}^{-3}. In thermal equilibrium, the concentration of the holes in the doped semiconductor is [TG EAPCET 9 May 2024 Shift 1]

Correct Answer is : 9×108m−3

\frac{2}{3} \times 10^7 {\m}^{-3}

Semiconductor Devices

Section: Physics

Question : 10 of 10

Marks: +1, -0

The concentration of electrons in an intrinsic semiconductor is 6×1015m−3. On doping with an impurity the electron concentration increases to 4×1022m−3. In thermal equilibrium, the concentration of the holes in the doped semiconductor is

[TG EAPCET 9 May 2024 Shift 1]

‌18×10−8m−3
‌1.5×10−7m−3
‌9×108m−3
‌‌
2
3
×107m−3

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