The intrinsic carrier concentration of a semiconductor is 1.2 \times 10^{16} {\m}^{-3}. On doping with an impurity, the electron concentration becomes 20 \times 10^5 times initial concentration. The concentration of the holes in the doped semiconductor is

Correct Answer is : 6×109m−3

TG EAMCET 29 Apr 2025 Shift 1 Paper

Question : 119 of 160

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The intrinsic carrier concentration of a semiconductor is 1.2×1016m−3. On doping with an impurity, the electron concentration becomes 20×105 times initial concentration. The concentration of the holes in the doped semiconductor is

‌6×1012m−3
‌12×1016m−3
‌12×109m−3
‌6×109m−3

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