SSC JE Electrical Engineering 2017 Set 3 Paper

Question : 140 of 200

Marks: +1, -0

In pure silicon, major part of the drift current in due to free electrons because___

there are more free electrons than holes
free electrons are in the valance band
mobility of electrons is greater than the mobility of holes
diffusion constant of electrons in greater than that of holes

Solution:

In pure silicon, major part of the drift current is due to free electron because mobility of electron is greater then the mobility of holes.
Because Drift velocity →

[V_d∝ µ (\mobility) ]

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