Pure Si at 500 K has equal number of electron (n_e) and hole (n_h) concentrations of 1.5\times10^16m^{-3},Doping by indium increases n_h to 4.5\times10^22m^{-3}.The doped semiconductor is of (2011 Mains)

Correct Answer is : p-type having electron concentration ne=5×109m−3

p-type having electron concentration n_e=5\times10^9m^{-3}

n-type with electron concentration n_e=5\times10^22m^{-3}

p-type with electron concentration n_e=2.5\times10^10m^{-3}

n-type with electron concentration n_e=2.5\times10^23m^{-3}

Class 12 NEET Physics Semiconductor Electronics Part 1

Question : 22 of 100

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Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016m−3,Doping by indium increases nh to 4.5×1022m−3.The doped semiconductor is of

(2011 Mains)

p-type having electron concentration ne=5×109m−3
n-type with electron concentration ne=5×1022m−3
p-type with electron concentration ne=2.5×1010m−3
n-type with electron concentration ne=2.5×1023m−3

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