Pure Si at 500 K has equal number of electron (n_e ) and hole (n_h ) concentrations of 1.5 \times 10^16 m^{–3}. Doping by indium increases n_h to 4.5 \times 10^22 m^{–3}. The doped semiconductor is of :-

Correct Answer is : p - type having electron concentration ne=5×109m–3

n - type with electron concentration n_e = 2.5 \times 10^23 m^{–3}

p - type having electron concentration n_e = 5 \times 10^9m^{–3}

n - type with electron concentration n_e = 5 \times 10^{22} m^{–3}

p - type with electron concentration n_e = 2.5 \times 10^{10} m^{–3}

NEET 2020 Model Question Paper 2

Question : 40 of 180

Marks: +1, -0

Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5×1016m–3. Doping by indium increases nh to 4.5×1022m–3. The doped semiconductor is of :-

n - type with electron concentration
ne=2.5×1023m–3
p - type having electron concentration
ne=5×109m–3
n - type with electron concentration
ne=5×1022m–3
p - type with electron concentration
ne=2.5×1010m–3

Validate

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