GATE Electronics and Communications (EC) 2022 Solved Paper

An ideal MOS capacitor (p-type semiconductor) is shown in the figure. The MOS capacitor is under strong inversion with V_G = 2 V. The corresponding inversion charge density (Q_iN) is 2.2 μC/cm². Assume oxide capacitance per unit area as C_OX = 1.7 μF/cm². For V_G = 4 V, the value of Q_IN is _______μC/cm². (rounded off to one decimal place).