A bar of silicon is doped with a boron concentration of 10 16 cm -3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 10 20 cm -3 s -1 . If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 10 10 cm -3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is

Correct Answer is : 2 × 1032 cm-6

GATE Electronics and Communications (EC) 2021 Solved Paper

Question : 16 of 65

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A bar of silicon is doped with a boron concentration of 10¹⁶ cm^-3 and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated throughout the volume of the bar at the rate of 10²⁰ cm^-3s^-1. If the recombination lifetime is 100 μs, the intrinsic carrier concentration of silicon is 10¹⁰ cm^-3 and assuming 100% ionization of boron, then the approximate product of steady-state electron and hole concentrations due to this light exposure is

10³² cm^-6
10²⁰ cm^-6
2 × 10³² cm^-6
2 × 10²⁰ cm^-6

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