GATE Electronics and Communications (EC) 2020 Solved Papers

Question : 59 of 65

Marks: +1, -0

The base of an npn BJT T1 has a linear doping profile

{Ns}( {x})

as shown below, The base of another npn BJT T2 has a uniform doping

{N}_{ {B}}

10^{17} {cm}^{-3}

. All other parameters are identical for both the devices. Assuming that the hole density profile is the same as that of doping, the common-emitter current gain of

{T} 2

approximately $2.0$ times that of $T 1$
approximately $0.7$ times that of $T 1$
approximately $0.3$ times that of ${T} 1$
approximately $2.5$ times that of ${T} 1$

Validate

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