GATE Electronics and Communications (EC) 2020 Solved Papers

Question : 13 of 65

Marks: +1, -0

Consider the recombination process via bulk traps in a forward biased pn homojunction diode. The maximum recombination rate is

U_{\max }

. If the electron and the hole capture cross-sections are equal, which one of the following is FALSE?

$U_{\max }$ depends exponentially on the applied bias.
$U_{\max }$ occurs at the edges of the depletion region in the device.
With all other parameters unchanged, $U_{\max }$ increases if the thermal velocity of the carriers increases.
With all other parameters unchanged, $U_{\max }$ decreases if the intrinsic carrier density is reduced.

Solution:

U_{\max }

occurs at the edges of the depletion region in the device..

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