GATE Electronics and Communications (EC) 2017 Shift 2 Solved Paper

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel μ_n and oxide capacitance per unit area C_ox. If gate-to-source voltage V_GS = 0.7 V, drain-to-source voltage V_DS = 0.1 V, (μ_n C_ox) = 100 μA/V², threshold voltage V_TH = 0.3 V and (W/L) = 50, then the transconductance g_m (in mA/V) is ____________