GATE Electronics and Communications (EC) 2017 Shift 2 Solved Paper

An n-channel enhancement mode MOSFET is biased at V_GS > V_TH and V_DS > (V_GS - V_TH), where V_GS is the gate-to-source voltage, V_DS is the drain-to-source voltage and V_TH is the threshold voltage. Considering channel length modulation effect to be significant, the MOSFET behaves as a