GATE Electronics and Communications (EC) 2017 Shift 1 Solved Paper

For the circuit shown, assume that the NMOS transistor is in saturation. Its threshold voltage V_tn = 1 V and its transconductance parameter ${\mathit{\mu }}_{\mathit{n}}{\mathit{C}}_{\mathit{o}\mathit{x}}\left(\frac{\mathit{W}}{\mathit{L}}\right)=1\mathit{m}\mathit{A}∕{\mathit{V}}^2.$ Neglect channel length modulation and body bias effects. Under these conditions, the drain current I_D in mA is ________.