GATE Electronics and Communications (EC) 2016 Shift 1 Solved Paper

Consider an n-channel metal-oxide-semiconductor field-effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $\frac{\mathit{W}}{\mathit{L}}=4$, μ_nC_ox = 70 × 10^-6 AV^-2, the threshold voltage is 0.3 V, and the channel length modulation parameter is 0.09 V⁻¹. In the saturation region, the drain conductance (in micro seimens) is ________.