GATE Electronics and Communications (EC) 2015 Shift 2 Solved Paper

A dc voltage of $10\mathit{V}$ is applied across an n – type silicon bar having a rectangular cross - section and a length of $1\mathit{c}\mathit{m}$ as shown in figure. The donor doping concentration ${\mathit{N}}_{\mathit{D}}$ and the mobility of electrons ${\mathit{\mu }}_{\mathit{n}}$ are ${10}^{-16}\mathit{c}{\mathit{m}}^{-3}$ and $1000\mathit{c}{\mathit{m}}^2{\mathit{V}}^{-1}{\mathit{s}}^{-1},$ respectively. The average time (in μsec) taken by the electrons to move from one end of the bar to other end is____________