GATE Electronics and Communications (EC) 2015 Shift 2 Solved Paper

A piece of silicon is doped uniformly with phosphorus with a doping concentration of 10¹⁶ /cm³ The expected value of mobility versus doping concentration for silicon full dopant ionization is shown below. The Charge of an electron is 1.6 × 10^-19 C. The conductivity (in S cm^-1) of the silicon sample at 300 K is_________