GATE Electronics and Communications (EC) 2014 Shift 2 Solved Paper

When a silicon diode having a doping concentration of N_A = 9 × 10¹⁶ /cm³ on p-side and N_D = 1 × 10¹⁶/cm³ on the n-side is reverse biased, the total depletion width is found to be 3 μm. Given that the permittivity of silicon is 1.04 × 10^-12 F/cm, the depletion width on the p-side and the maximum electric field in the depletion region, respectively, are