A silicon bar is doped with donor impurities N D = 2.25 × 10 15 atoms / cm 3 . Given the intrinsic carrier concentration of silicon at T = 300 K is n i = 1.5 × 10 10 cm -3 . Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

Correct Answer is : n0 = 2.25 × 1015 cm-3, p0 = 1 × 105 cm-3

n 0 = 1.5 × 10 16 cm -3 , p 0 = 1.5 × 10 5 cm -3

n 0 = 1.5 × 10 10 cm -3 , p 0 = 1.5 × 10 15 cm -3

n 0 = 2.25 × 10 15 cm -3 , p 0 = 1.5 × 10 10 cm -3

n 0 = 2.25 × 10 15 cm -3 , p 0 = 1 × 10 5 cm -3

GATE Electronics and Communications (EC) 2014 Shift 2 Solved Paper

Question : 18 of 65

Marks: +1, -0

A silicon bar is doped with donor impurities N_D = 2.25 × 10¹⁵ atoms / cm³. Given the intrinsic carrier concentration of silicon at T = 300 K is n_i = 1.5 × 10¹⁰ cm^-3. Assuming complete impurity ionization, the equilibrium electron and hole concentrations are

n₀ = 1.5 × 10¹⁶ cm^-3, p₀ = 1.5 × 10⁵ cm^-3
n₀ = 1.5 × 10¹⁰ cm^-3, p₀ = 1.5 × 10¹⁵ cm^-3
n₀ = 2.25 × 10¹⁵ cm^-3, p₀ = 1.5 × 10¹⁰ cm^-3
n₀ = 2.25 × 10¹⁵ cm^-3, p₀ = 1 × 10⁵ cm^-3

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