GATE Electronics and Communications (EC) 2013 Solved Paper

The small-signal resistance (i.e.,$\mathit{d}{\mathit{V}}_{\mathit{B}}∕\mathit{d}{\mathit{I}}_{\mathit{D}}$ ) in $\mathit{k}\mathit{\Omega }$ offered by the n-channel MOSFET M shown in the figure below, at a bias point of ${\mathit{V}}_{\mathit{B}}=2\mathit{V}$ is (device data for M: device transconductance parameter, ${\mathit{k}}_{\mathit{N}}={\mathit{\mu }}_{\mathit{n}}{\mathit{C}}_{\mathit{o}\mathit{x}}\left(\mathit{W}∕\mathit{L}\right)=40\mathit{\mu }\mathit{A}∕{\mathit{V}}^2$ threshold voltage ${\mathit{V}}_{\mathit{T}\mathit{N}}=1\mathit{V}$, and neglect body effect and channel length modulation effects)