GATE Electronics and Communications (EC) 2012 Solved Paper

The source of a silicon (n_i= 10¹⁰ per cm³) n-channel MOS transistor has an area of 1 sq μm and a depth of 1 μm. If the dopant density in the source is 10¹⁹/cm³, the number of holes in the source region with the above volume is approximately,