GATE Electronics and Communications (EC) 2012 Solved Paper

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Question : 11 of 65
 
Marks: +1, -0
The current ib through the base of a silicon npn transistor is 1+0.1cos(10000Ï€t)mA .
At 300K , the rÏ€ in the small signal model of the transistor is

Take Boltzmann's constant as k = 1.38064852 × 10-23 m2 kg s-2 K-1
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