GATE Electrical Engineering (EE) 2020 Solved Paper

Question : 28 of 65

Marks: +1, -0

The cross-section of a metal-oxide-semiconductor structure is shown schematically. Starting from an uncharged condition, a bias of

+3 {V}

is applied to the gate contact with respect to the body contact. The charge inside the silicon dioxide layer is then measured to be +Q. The total charge contained within the dashed box shown, upon application of bias, expressed as a multiple of

Q

(absolute value in Coulombs, rounded off to the nearest integer) is____________

Your Answer:

Validate

Solution:

So. The shematic shown is a MOS capacitor
When

+3 {V}

in applied, change inside the

{\SiO}_{2}

layer is

+ {Q}

. Since it is MOS capacitor, the change in the GATE is Q.

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