The correct option is: Option B: The energy gap of Sn is zero volt while that of Si is 0.07 V Explanation: Both Sn (tin) and Si (silicon) belong to the 14th group of the periodic table, and they share some common properties. However, the key difference explaining why Sn behaves as a metal while Si behaves as a semiconductor lies in their energy band structure. In metals, the valence band and conduction band overlap, which means there is no energy gap (Eg) between them. This allows electrons to move freely within the material, contributing to high electrical conductivity. In semiconductors, there is a small energy gap between the valence band and the conduction band. For silicon, this energy gap is approximately 0.07 eV . This small but significant gap means that at room temperature, some electrons can gain enough thermal energy to jump from the valence band to the conduction band, allowing moderate electrical conductivity that can be manipulated through doping and other methods. For tin, the energy gap is essentially zero because the valence and conduction bands overlap, which leads to metallic behavior with high electrical conductivity. Thus, the primary reason why Sn is a metal and Si is a semiconductor is due to the difference in their energy gaps. The energy gap of Sn is effectively zero, while Si has a small but finite energy gap of 0.07 eV .