A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6\times10^{16}/m^3. If the donor concentration level is 4.8\times10^{20}/m^{3}, then the concentration of holes in the semiconductor is

Correct Answer is : 5.3×1011/ m3

AP EAMCET Engineering 2014 Code A Solved Paper

Question : 118 of 160

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A crystal of intrinsic silicon at room temperature has a carrier concentration of 1.6×1016/m3. If the donor concentration level is 4.8×1020/m3, then the concentration of holes in the semiconductor is

4×1011/ m3
4×1012/ m3
5.3×1011/ m3
5.3×1012/ m3

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