In a p-n junction diode, the thickness of deplection layer is 2 \\times10^{-6} { m} and barrier potential is 0.3 {V} . The intensity of the electric field at the junction is

Correct Answer is : 1.5×105Vm−1 from n to p side

0.6 \\times10^{-6} {Vm}^{-1} from n to p side

0.6 \\times10^{-6} {Vm}^{-1} from p to n side

1.5 \\times10^{5} {Vm}^{-1} from n to p side

1.5 \\times10^{5} {Vm}^{-1} from p to n side

AP EAMCET Engineering 2011 Solved Paper

Section: Physics

Question : 4 of 160

Marks: +1, -0

In a p−n junction diode, the thickness of deplection layer is 2×10−6m and barrier potential is 0.3V . The intensity of the electric field at the junction is

0.6×10−6Vm−1 from n to p side
0.6×10−6Vm−1 from p to n side
1.5×105Vm−1 from n to p side
1.5×105Vm−1 from p to n side

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