A crystal of intrinsic silicon at room temperature has carrier concentration of 1.6\times10 ^16 \/ m^3. if the donor concentration level is 4.8\times10^20 \/m^3, then the concentration of holes in the semi conductor is

Correct Answer is : 5.3×1011∕m3

AP and TS EAMCET Engineering 2020 Model Paper 3

Question : 114 of 160

Marks: +1, -0

A crystal of intrinsic silicon at room temperature has carrier concentration of 1.6×1016∕m3. if the donor concentration level is 4.8×1020∕m3, then the concentration of holes in the semi conductor is

53×1012∕m3
4×1011∕m3
4×1012∕m3
5.3×1011∕m3

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