Given that the mobility of electrons in Ge is 0.4 m^2 V^{-1} s^{-1} and electronic charge is 1.6\times10^{-19}C. The number of donor atom (per m^3) semiconductor of conductivity 500 mho/m is

AIIMS 2013 Physics Question Paper for free online practice with solutions

Question : 26 of 60

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Given that the mobility of electrons in Ge is 0.4 m2 V−1 s−1 and electronic charge is 1.6×10−19C. The number of donor atom (per m3) semiconductor of conductivity 500 mho/m is

8×1021
8×1015
5×1021
8×1016

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