Silicon (at 300 K) has hole concentration (and equal electron concentration) of 1.5 × 10 16 m -3 . After indium is doped, the new hole concentration is 4.5 × 10 22 m -3 . The value of electron concentration in the doped silicon is:

Correct Answer is : 5.0 × 109 m-3

AAI ATC Junior Executive 21 Feb 2023 Shift 2 Paper

Question : 96 of 120

Marks: +1, -0

Silicon (at 300 K) has hole concentration (and equal electron concentration) of 1.5 × 10¹⁶ m^-3. After indium is doped, the new hole concentration is 4.5 × 10²² m^-3. The value of electron concentration in the doped silicon is:

1.5 × 10¹⁶ m^-3
3.0 × 10⁶ m-3
4.5 × 10²² m-3
5.0 × 10⁹m-3

Validate

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